Abstract
The influence of a quasi-equilibrium electron-hole plasma on the population lifetime of non-equilibrium longitudinal optic (LO) phonons is studied in GaAs quantum wells using a multiple-beam Raman scattering technique to separately control the phonon generation and free-carrier injection processes. The lifetime of non-equilibrium, small-wavevector LO phonons is found to decrease from 4.5 ps to 1.9 ps as the density of the cold plasma is increased to approximately 3*1011cm-2 by adjusting the intensity of an infrared laser tuned close to the lowest subband gap of the quantum wells.
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