Abstract
Rate equations for the LO-phonon distribution function and mean electron energy with electron energy collision broadening effect included are derived in the frame of Zubarev's theory of nonequilibrium statistical operator. Numerical evaluation of the rate of change of the LO-phonon distribution function is performed for a typical process of laser excited hot electron relaxation in several polar semiconductors (GaSb, GaAs, InP, CdSe, ZnS). The electron energy collision broadening is found to lead to a new feature in the wave vector dependence of the LO-phonon generation rate. This feature provides an example of an effect which is clearly beyond the Boltzmann equation level of description.
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