Abstract
The theory of hot phonon effects in heterolayers is presented, in particular for electrons in gallium arsenide. The acoustic mode and optical mode cases are distinct. For the former, at low temperature, a phonon flux is radiated out of the heterolayer, and can be partially absorbed in a neighboring layer. For the latter, the phonon excitation buffers the electron energy dissipation and reduces the power scale in the dependence of electron temperature on power input. Also it adds appreciably to the total energy per electron and lengthens the thermalization ttime. Theoretical results are compared with experimental data.
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