Abstract
The hot phonon effect in spin relaxation of drifting electrons in the zinc-blende semiconductor GaAs was investigated. Temperature- and doping-density dependent spin relaxations caused by polar optical phonon (POP) scattering were studied. Ehrenreich’s variational approach was used to include the longitudinal POP effect in a model of the scattering process. The electron spin was found to relax with a sub-THz rate and the spin lifetime (τs) was found to decrease with increasing the strength of the drifting field because during transport in an electric field, electrons were accelerated to higher velocities at higher fields. A high-field, however, completely depolarized the electron spin due to an increase of the electron temperature via the longitudinal POP scattering. It was also found that τs increases with increasing, but moderate, n-doping density or decreasing temperature. The results are discussed in detail.
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