Abstract
Narrow band gap photon infrared detectors require cryogenic cooling to suppress the noise deteriorating the performance. Among the competitive materials and theoretical predictions favouring type-II superlattices InAs/GaSb, HgCdTe has been still considered as the leader in terms of the fundamental physical parameters. The size, weight, power consumption and multispectral response of the infrared detection system play decisive role in fabrication of the higher operation temperature detectors. Several strategies have been implemented to improve the performance at elevated temperatures. The most efficient and used in HgCdTe technology are: non-equilibrium architectures and currently an idea of the barrier detectors. In this paper we present the comparison of the \(\hbox {nB}_\mathrm{n}\hbox {n}\) and \(\hbox {pB}_\mathrm{p}\hbox {p}\,(\hbox {B}_\mathrm{n}\) and \(\hbox {B}_\mathrm{p}\) stands for n/p-type doped barrier) HgCdTe photodetectors. \(\hbox {pB}_\mathrm{p}\hbox {p}\) architecture allows to reach higher performance (detectivity \({\sim }10^{9}\,\hbox {cm}\,\hbox {Hz}^{1/2}/\mathrm {W}\) for \(T = 200\) K) at mid-wave spectrum for wide range of absorber p-type doping \(2\times 10^{14}\rightarrow 10^{17}\,\hbox {cm}^{-3}\) and barrier Cd composition \(0.37\rightarrow 0.7\).
Highlights
Higher operation temperature (HOT) condition of the mid-wave (MWIR, 3–8 μm) infrared radiation (IR) photodetectors is one of the most important research area in infrared technology
The new concepts of IR technologies are marked in blue to include barrier detectors, multi-stage, photon trapping detectors and type-II superlattices (T2SLs) with their potential to compete with HgCdTe
Potential capability of the simple unipolar BIRD detector is that the generationrecombination (GR) current being dominated by the generation of electrons and holes by Shockley–Read–Hall (SRH) traps in the depletion region may be significantly suppressed by widegap barrier implementation to the detector’s structure
Summary
Higher operation temperature (HOT) condition of the mid-wave (MWIR, 3–8 μm) infrared radiation (IR) photodetectors is one of the most important research area in infrared technology. Potential capability of the simple unipolar BIRD detector is that the generationrecombination (GR) current being dominated by the generation of electrons and holes by Shockley–Read–Hall (SRH) traps in the depletion region may be significantly suppressed by widegap (in relation to absorber and cap layer) barrier implementation to the detector’s structure. Depending on the wavelength of operation, a relatively high bias, typically greater than the bandgap energy (turn on voltage) is required to be applied to the device in order to collect the photogenerated carriers This leads to strong band-to-band (BTB) and trap-assisted (TAT) tunneling due to the high electric field at the barrier absorber heterojunction. The paper presents comparison of the BIRD nBnn and pBpp HgCdTe detectors in terms of dark current and detectivity versus voltage, absorber doping, barrier Cd composition and doping
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