Abstract
Modulation doping of silicon has great potential for miniaturization, surface passivation, and third generation photovoltaics (PV). At a modulation-doped silicon surface, we observe the formation of a 2D hole layer at the silicon surface at low temperatures by means of photoluminescence (PL) measurements. A line shape analysis of band–band and hot luminescence reveals the hole density (which is equal to the modulation-doped acceptor density). A high excitation intensity leads to a Fermi edge singularity of the band–band and hot PL emission. While the 2D layer can be characterized by the observed luminescence, the spectral region of twice the bandgap is fully dominated by emission from this surface layer, impeding the measurement of bulk hot luminescence, e.g., from Auger electrons or from nonthermalized carriers in a hot carrier PV device.
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