Hot hole induced interface state generation and annihilation in SOI MOSFETs

Abstract

The effects of pure hot hole injection in SOI MOSFET's are investigated. Pure hot hole injection is achieved by exploiting the opposite channel based carrier injection phenomenon. It is found that significant amounts of interface states are generated, some of which are annihilated by a subsequent hot electron injection pulse. A power law of the form D/sub it/(t)=Kt/sup n/ with n close to 0.25 was obtained, indicating a more complex, diffusion limited, electrochemical reaction at the interface than previously reported.