Abstract
One particular application of amorphous silicon oxide (SiO2), a material crucial for silicon device technology and design, is as a flash memory tunnel dielectric. The breakdown field of SiO2 exceeds 107 V cm−1. Strong electric fields in SiO2 give rise to phenomena that do not occur in crystalline semiconductors. In relatively weak electric fields (104–106 V cm−1), the electron distribution function is determined by the scattering of electrons on longitudinal optical phonons. In high fields (in excess of 106 V cm−1), the distribution function is determined by electron–acoustic phonon scattering.
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