Abstract
Low temperature (2K) photoluminescence measurements have been performed in delta-doped GaAs(Si) layers, with carrier sheet concentrations N s ranging from 10 12 to 10 13cm −2. Under the same excitation intensity, the luminescence spectra of all samples show a high energy tail which becomes more pronounced as N s increases. Well defined electron temperatures, higher than the lattice temperature, are obtained, characterizing the electron heating effect in this system. The architecture of the delta-doping allows to observe hot electrons even at relatively low laser pumping intensities.
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