Abstract
Nanowire chip-based electrical and optical devices such as biochemical sensors, physical detectors, or light emitters combine outstanding functionality with a small footprint, reducing expensive material and energy consumption. The core functionality of many nanowire-based devices is embedded in their p-n junctions. To fully unleash their potential, such nanowire-based devices require – besides a high performance – stability and reliability. Here, we report on an axial p-n junction GaAs nanowire X-ray detector that enables ultra-high spatial resolution (~200 nm) compared to micron scale conventional ones. In-operando X-ray analytical techniques based on a focused synchrotron X-ray nanobeam allow probing the internal electrical field and observing hot electron effects at the nanoscale. Finally, we study device stability and find a selective hot electron induced oxidization in the n-doped segment of the p-n junction. Our findings demonstrate capabilities and limitations of p-n junction nanowires, providing insight for further improvement and eventual integration into on-chip devices.
Highlights
Nanowire chip-based electrical and optical devices such as biochemical sensors, physical detectors, or light emitters combine outstanding functionality with a small footprint, reducing expensive material and energy consumption
We report on a single GaAs nanowire axial p–n junction working as a hard X-ray detector with ultra-high spatial resolution
By combining in-operando X-ray fluorescence (XRF), X-ray absorption near-edge spectroscopy (XANES), and X-ray beam induced current (XBIC) measurements using a synchrotron X-ray nanobeam, we obtain new insights into the hot electron processes involved at the nanoscale
Summary
Nanowire chip-based electrical and optical devices such as biochemical sensors, physical detectors, or light emitters combine outstanding functionality with a small footprint, reducing expensive material and energy consumption. The core functionality of many nanowire-based devices is embedded in their p-n junctions To fully unleash their potential, such nanowirebased devices require – besides a high performance – stability and reliability. We report on an axial p-n junction GaAs nanowire X-ray detector that enables ultra-high spatial resolution (~200 nm) compared to micron scale conventional ones. In-operando X-ray analytical techniques based on a focused synchrotron X-ray nanobeam allow probing the internal electrical field and observing hot electron effects at the nanoscale. We report on a single GaAs nanowire axial p–n junction working as a hard X-ray detector with ultra-high spatial resolution. This system is thoroughly analyzed in-operando via nanoscale X-ray analytical techniques. By combining in-operando X-ray fluorescence (XRF), X-ray absorption near-edge spectroscopy (XANES), and X-ray beam induced current (XBIC) measurements using a synchrotron X-ray nanobeam, we obtain new insights into the hot electron processes involved at the nanoscale
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