Abstract
Abstract Formulas are presented to calculate the heating of charge carriers and the generation of nonequilibrium phonons by intense photoexcitation of quantum-well heterostructures. It is shown that the deviations from thermal equilibrium are more pronounced for quasi-two-dimensional structures than for bulk material. Supporting experimental data are given on an MO-CVD Al x Ga 1- x As-GaAs heterostructure consisting of a large GaAs quantum well ( L z ∼ 200 A) coupled to a phonon-generating array of seven small GaAs quantum wells ( L z ∼ 50 A).
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