Year-end Sale % OFF 
Abstract
Abstract Formulas are presented to calculate the heating of charge carriers and the generation of nonequilibrium phonons by intense photoexcitation of quantum-well heterostructures. It is shown that the deviations from thermal equilibrium are more pronounced for quasi-two-dimensional structures than for bulk material. Supporting experimental data are given on an MO-CVD Al x Ga 1- x As-GaAs heterostructure consisting of a large GaAs quantum well ( L z ∼ 200 A) coupled to a phonon-generating array of seven small GaAs quantum wells ( L z ∼ 50 A).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
