Abstract
The behavior of emitted LA phonons when an electric field is applield to \ensuremath{\delta}-doped 〈001〉 GaAs is investigated by the time-of-flight method. The characteristics show peculiar features due to specific interaction processes involved, i.e., direct emission by heated carriers as well as resonance absorption of nonequilibrium LA phonons besides decay and conversion processes of high-energy phonons. The latter contributions are in accordance with Monte Carlo simulations.
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