Abstract
A review of experimental results on the hot-electron fluctuations specific to a two-dimensional electron gas confined in a heterostructure channel is given. The main attention is paid to AlGaAs/GaAs and InP-based InGaAs channels subjected to a high electric field applied along the ungated channel. The microwave electronic noise caused by the hot-electron fluctuations is analyzed in terms of fast and ultrafast kinetic processes.
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