Abstract
A recently derived model for stationary flow of energy and charge carriers in semiconductors—consisting of a coupled system of nonlinear elliptic equations—is analysed by the methods of singular perturbation theory. This analysis reveals the solution structure and justifies a modified version of the standard drift-diffusion approximation for charge carrier flow.
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Schedule a callMore From: Zeitschrift f\xfcr angewandte Mathematik und Physik
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