Abstract
The enhancement of electron mobility and high-field drift velocity in a HEMT (high electron mobility transistor)-type channel of AlGaAs/InGaAs/AlGaAs double barrier heterostructures by reducing the electron–interface phonon interaction is obtained. The significant change in the electron concentration in the channel of the modulation-doped AlGaAs/InGaAs/AlGaAs heterostructures at low electric fields is experimentally discovered.
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