Abstract
Nanosecond-pulsed technique is used to study hot-electron transport in donor-doped 4H–SiC (n=2×1017cm−3) biased parallel to the basal plane. The measurements of current with 1ns voltage pulses are carried out at average electric fields up to 570kV∕cm. A region with a negative differential conductance is observed for the range of fields exceeding 280kV∕cm, followed by a sharp increase in the current at fields over 345kV∕cm. The dependence of drift velocity on electric field is deduced for the field range below the onset of the negative differential conductance to appear: the value of the saturation velocity is estimated as 1.4×107cm∕s at room temperature.
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