Abstract
Monte Carlo simulation of steady-state electron transport in ZnSe and ZnS diodes of n + -i(n)-n + structure with a 0.2 µm active layer length is described. The anode voltage ranges from 1 to 5 V. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field, potential and average electron velocity are computed. Based on these data, the near ballistic nature of the electron transport in the 0.2 µm long diode and the importance of the back-scattering of electrons from the anode n + -layer are discussed. Also, the effects of the lattice temperature and doping on the length of the active layer are discussed. Our calculations show that electron reach to a higher drift velocity in the ZnSe than ZnS. So ZnSe material is a good candidate for high power device fabrication.
Highlights
Wide band gap ZnSe and ZnS have two main uses in commercial devices, providing bright LEDs emitting diodes and high power and high temperature heterojunction field effect transistors (HFETs) which can sustain high current densities at elevated temperatures (Arabshahi et al, 2008)
A wide energy band gap leads to a low intrinsic carrier concentration, which enables a more precise control of free carrier concentration over a wide range of temperatures, and the devices made of this kind of material will be operable at high temperatures with large breakdown voltage (Fischetti & Laux, 1991)
Simulations for higher anode voltages are needed in view of the situation in practical devices where engineering problems call for anode voltages of no less than about the Schottky barrier height or the p-n junction barrier height (Besikci et al, 2000)
Summary
Hot electron of steady-state transport in submicrometer ZnSe and ZnS n+-i(n)-n+ diodes. Badieeyan[1] and M.R. Khalvati2 1Physics Department, Ferdowsi University of Mashhad, Mashhad, Iran
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