Abstract
High electric field effects above 1 MV/cm in a-Si:H, have been investigated employing an ac-driven double insulating electroluminescent device structure. An emission tailing into energies above the optical energy gap has been observed, giving direct evidence for existence of hot-electrons in a-Si:H generated by an electric field. An analysis of the emission spectrum due to the lucky-drift model indicates the mean free path of 1.0 nm for hot-electrons. Electroabsorption measurements reveal that the internal electric field in a-Si:H saturates at ∼ 1.5 MV/cm, which implies multiplication of charges transferred across the a-Si:H layer at this field strength. Avalanche multiplication would be the most consistent mechanism with the results of the hot-electrons induced light emission.
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