Abstract
I/sub G/ in P-channel SOI (silicon-on-insulator) MOSFETs is modeled and device degradation is characterized. It is found that E/sub m/ is about the same as in bulk devices. The SOI devices used in this study were p/sup +/ polysilicon gate P-channel MOSFETs fabricated using a modified submicron CMOS technology on SIMOX (Separation by IMplanted OXygen) wafers. It is shown that the peak degradation of both I/sub D/ and G/sub m/ occurs close to the I/sub g/ peak. This indicates that electron injection is the dominant mechanism for PMOS degradation in SOI and similar to bulk PMOS. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
