Abstract
The frequency performance of a GaN heterostructure field-effect transistor is discussed in terms of plasmon-assisted dissipation of LO-mode heat accumulated by non-equilibrium longitudinal optical phonons (hot phonons). Hot phonons cause additional scattering of electrons and also facilitate defect formation. Plasmon–LO-phonon resonance is experimentally resolved in a wide range of experiments such as fluctuations, dissipation, hot-electron transport, transistor frequency performance, transistor reliability, and transistor phase noise.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
