Hot electron energy loss rates in GaAs/GaAlAs multiple quantum wells: effects of finite barrier height and well width

Abstract

Hot electron energy loss rate has been studied in GaAs/GaAlAs multiple quantum wells in the electron temperature range 3.3– 15.0 K where electron–acoustic phonon interaction dominates. Calculations are presented for power loss by incorporating the finite barrier height and screened interaction. An excellent agreement between our calculations and the experimental data of Celik et al. [Semicond. Sci. Technol. 17 (2002) 18] and Cankurtaran et al. [Phys. Stat. Sol. (b) 229 (2002) 1191] for quantum wells with widths in the range 51– 140 A ̊ and base lattice temperature in the range 1.7– 5.9 K is obtained. The analysis of the data, apart from demonstrating the importance of finite barrier height, has also brought out the relative importance of the contribution to power loss due to deformation potential and piezoelectric scatterings. The values deduced for the deformation potential constant E d lie in the range 7.5– 12.5 eV , in contrast to the large scatter in its values, usually observed in the literature. The need for more experimental data, for well widths less than 40 A ̊ and higher than 140 A ̊ , is pointed out for a better understanding of well width dependence of electron energy loss rate.