Abstract
Experimental results on high electric field longitudinal transport in GaAs/AlAs and GaAs/Ga 1-xAl xAs multiple quantum wells (MQW) are presented and compared with the prediction of a dielectric continuum model. We draw from our experiments the following four conclusions. (i) In GaAs/Ga 1-xAl xAs systems the dominant energy and momentum relaxation mechanism is through scattering with GaAs -modes. (ii) However, in GaAs/AlAs systems the AlAs interface mode is dominant in relaxing the energy and momentum of the quantum well electrons. (iii) The hot electron momentum relaxation as obtained from the high-field drift velocity experiments is strongly affected by the production of hot phonons as expected from a model involving a non-drifting hot phonon distribution. (iv) The importance of the AlAs interface mode in GaAs/Ga 1-xAl xAs MQW is not the result of the intrinsic scattering rate but related to its shorter lifetime, compared to GaAs modes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
