Abstract
We succeeded in getting low resistivity ZnS single crystal by Al diffusion in Zn melt at temperature of 1000°C, 950°C and 900°C. The diffusion coefficient of Al in ZnS was obtained by measuring the profile of Al using Schottky barrier capacitance method, and the activation energy of Al was determined as 3.4 eV.Using those ZnS crystals, electron emission experiment was carried out. 300 A thick Au or Pd film was evaporated on ZnS surface in 10-8 Torr and Cs was deposited on it. The diode was forward biased. and a part of hot electrons injected into the metal through Schottky barrier was emitted from the metal surface into vacuum. The fraction of the emission current to the diode current was so low as 10-7. The decay of the emission current has been observed, and it seemed to be due to the reaction of Cs to metal evaporated on ZnS surface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
