Abstract
The piezoresistance effect of n-inversion layers in the hot-electron regime is discussed. The measurements were performed on short-channel n-MOSFETs at both 77 and 300 K. From the data at 77 K, clear evidence is obtained for different saturation velocities of electrons in Si depending on the occupation of the subbands. By application of this effect to 300 K, good agreement between theory and experiment is achieved. Furthermore, the mechanical prestress inside the transistor has been estimated to reach values of up to 150 N-mm/sup -2/.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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