Hot Electron Effect in Si(111) Inversion Layer at Low Temperatures

Abstract

The rate of electron energy loss to surfons in Si(111) inversion layer is found theoretically to be given by - =λ T e 5 for very low lattice temperature T ≪ T e ≪4×[ N s /(10 12 cm -2 )] K irrespective of the phonon modes, the relation being the same as the one we found previously for the (100) surface. The relation as deduced from Ono et al. 's experiment ( T =10 mK, \(T_{\text{e}}{\lesssim}2\) K, N s =1.6×10 13 cm -2 ) agrees well with our prediction in the T e -dependence, but not in the value of λ.