Abstract

A theory of hot electron cooling power due to polar optical phonons Pop is developed in 3D Dirac semimetal (3DDS) Cd3As2 taking account of hot phonon effect. Hot phonon distribution Nq and Pop are investigated as a function of electron temperature Te, electron density ne, and phonon relaxation time . It is found that Pop increases rapidly (slowly) with Te at lower (higher) temperature regime. Whereas, Pop is weakly decreasing with increasing ne. The results are compared with those for three-dimensional electron gas (3DEG) in Cd3As2 semiconductor. Hot phonon effect is found to reduce Pop considerably and it is stronger in 3DDS Cd3As2 than in Cd3As2 semiconductor. Pop is also compared with the hot electron cooling power due to acoustic phonons Pac. We find that a crossover takes place from Pac dominated cooling at low Te to Pop dominated cooling at higher Te. The temperature at which this crossover occurs shifts towards higher values with the increase of ne. Also, hot electron energy relaxation time is discussed. It is suggested that can be tuned to achieve faster or slower energy loss for suitable applications of Cd3As2.

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