Abstract
This letter presents a deep submicron CMOS process that takes advantage of phosphorus transient enhanced diffusion (TED) to improve the hot carrier reliability of 3.3 V input/output transistors. Arsenic/phosphorus LDD nMOSFETs with and without TED are fabricated. The TED effects on a LDD junction profile, device substrate current and transconductance degradation are evaluated. Substantial substrate current reduction and hot carrier lifetime improvement for the input/output devices are attained due to a more graded n/sup -/ LDD doping profile by taking advantage of phosphorus TED.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
