Abstract
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced “cut-off ” at E LO is observed for up to ∼3 ps after photoexcitation. Monte Carlo simulations show that this behaviour is due to a remarkably strong electron–LO phonon interaction. Excitonic effects are also pronounced, and strongly influence the dynamics.
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