Abstract
In this paper, threshold voltage (VTH) stability of the ultrashallow body silicon-oxide-nitride-oxide-silicon gate power MOSFET (SG-MOSFET) under hot carrier injection conditions is characterized and discussed. Experimental results indicate that hot electron injection will increase the VTH from 1 to 2 V in the lifetime of the device. On the other hand, hot hole injection has no significant influence on the VTH stability of the device. The different effects caused by hot electron injection and hot hole injection are explained by using numerical analysis and experimental characterization, and results suggest that the VTH stability of the ultrashallow body SG-MOSFET will be improved if the short channel effect of the structure can be suppressed.
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