Abstract
Threshold voltage shifts showed different behaviour under strong and weak current saturation stress owing to different degradation mechanisms. Under strong saturation stress, ΔVt showed a tendency to saturate with the stress time, whereas under weak saturation stress, the device degradation continued to increase in the case of the longer stress time. In the case of the longer term stress, the degradation under weak saturation stress could be more serious than that under strong saturation stress.
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