Hot-carrier-induced degradation in nitrided oxide MOSFETs

Abstract

Hot-carrier-induced degradation in commercially prepared silicon-gate MOSFETs incorporating ammonia annealed, nitrided oxides as the gate dielectric is examined and compared with the degradation observed in similar devices incorporating conventional oxides. Nitridation at 1100 degrees C for 2 h is observed to reduce the rate of transconductance degradation and threshold voltage increase by nearly half, compared to the oxide for stressing at both low and high gate bias, and to modify the effects of stressing on the substrate current characteristics. In contrast, nitridation at 1150 degrees C produces both improvements and degradations in device stability depending on the parameter examined and the stress conditions. While ammonia annealing introduces nitrogen, it also appears to incorporate excess hydrogen in the dielectrics that alters charge trapping and interface-state generation so that the performance of the dielectric under electrical stress depends on the concentrations of both species.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>