Abstract
A detailed analysis of the degradation of various lightly doped drain (LDD) devices is presented. Technology parameters that are varied are gate length, LDD n-dose, and energy for devices with 20-nm gate oxide. Different DC stress conditions are investigated. To gain insight into the degradation process a simulation tool is used that self-consistently calculates the oxide damage during a DC stress experiment. This enables the location and amount of oxide charges and interface states due to hot carrier injection to be obtained. The relationship between stress-induced damage and device hot carrier hardness is discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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