Hot Carrier Effects on Real and Imaginary Parts of Brillouin Susceptibilities of Magnetoactive Doped III-V Semiconductors (Applied to N-type Doped InSb)

Abstract

An analytical investigation is made of hot carrier effects on real and imaginary parts of Brillouin susceptibility ( ) of magnetoactive doped III-V semiconductors. Coupled mode approach is used to obtain expressions for . Numerical calculations are made for n-InSb crystal −CO2 laser system. Efforts are made to obtain enhanced values of and change of their sign under appropriate selection of external magnetic field (B0) and doping concentration (n0). The hot carrier effects of intense laser radiation modifies the momentum transfer collision frequency of carriers and consequently the nonlinearity of the medium, which in turn (i) further enhances , (ii) shifts the enhanced towards smaller values of B0, and (iii) widens the range of B0 at which change of sign of occurs. The change of sign of enhanced of magnetoactive doped III-V semiconductors, validates the possibility of chosen Brillouin medium as a potential candidate material for the fabrication of stimulated Brillouin scattering dependent widely tunable and efficient optoelectronic devices such as optical switches and frequency converters.
 HIGHLIGHTS
 
 Hot carrier effects of intense laser radiation
 
 enhances real and imaginary parts of Brillouin susceptibility,
 shifts the enhanced real and imaginary parts of Brillouin susceptibility towards smaller values of magnetostatic field,
 widens the range of magnetostatic field at which change of sign of real and imaginary parts of Brillouin susceptibility occurs
 
 
 Analysis offer three achievable resonance conditions at which significant enhancement as well as change of sign of real and imaginary parts of Brillouin susceptibility are obtained
 Analysis establishes the technological potentiality of III-V semiconductors as hosts for fabrication of SBS based widely tunable and efficient optoelectronic devices
 
 GRAPHICAL ABSTRACT