Year-end Sale % OFF 
Abstract
Photon emission and the electrical characteristics of a InGaZnO (IGZO) thin-film transistor (TFT) were evaluated to clarify the existence of hot carriers and their effects. The photon emission was observed from the drain edge of the IGZO-TFT and the capacitance–voltage characteristics indicated that a potential barrier was formed at the drain region when the device is driven by high drain voltage of 30 V. Based on these results, the photon emission phenomenon from the IGZO-TFT was induced by hot carriers that should be considered as a significant degradation mode for a high-performance oxide semiconductor device.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
