Abstract
Picosecond time- and energy-resolved photoluminescence (PL) spectroscopy is used to investigate hot carrier dynamics in GaAs epilayer structures grown on silicon substrates. The existence of biaxial stress arising from the thermal expansion difference between GaAs and Si substrates alters the valence band of GaAs epilayer structures on Si. Using the radiative transitions from electrons in donor (Si, 1016 cm-3) states to separated valence bands in a 2 mu m GaAs epilayer on Si, energy relaxation of thermalized hot holes is studied. Different electron energy relaxation dynamics are observed in thin and wide modulation Be-doped GaAs-AlGaAs multiple quantum wells grown on Si substrates, arising from different valence subband structures.
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