Hot-Carrier degradation in P- and N-channel EDMOS for smart power application

Abstract

P- and N- channel Extended Drain MOSFETs (EDMOS) are analyzed through its sensitivity to Hot-Carrier (HC) degradation using accelerated lifetime technique. N- and P- channel EDMOS are optimized for a gate-length LG = 0.5 μm, with gate-oxide thickness at 2.3 nm. We have evaluated more precisely the HC damage caused from channel to the extended drain by an improved extraction of series resistance (ΔRSD) till a 2nd order mobility modeling as a function of stressing VGS from VGS = 0 to VGmax. This allows to determine the worst-case of lifetime dependence in relation to the damage in the drift zone where breakdown sensitivity is found to be intimately bound up with the hot-hole (HH) injection efficiency in N-EDMOS while P-EDMOS exhibits a larger security margin.