Abstract
We have investigated hot carrier dynamics in GaSb structures, bulk and quantum wells, using picosecond time-resolved photoluminescence. Bulk samples show remarkably little carrier heating which we attribute to rapid electron relaxation within the L valleys. Quantum wells show slower cooling than the bulk, which is consistent with similar measurements of other III–V systems. Strong Auger recombination heating of the plasma is found to be responsible for maintaining relatively high temperatures at times ⩾ 25 ps.
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