Abstract
A new type of plasma-deposited amorphous silicon photovoltaic cell having a high out-put voltage has been developed. Structure of the new devices is a horizontally multilaminated p-i-n unit cell with a indium-tin-oxide heteroface window expressed as a conventional symbols of ITO/(p-i-n) m/SS. The open-circuit voltage V oc is nearly proportional to the number of repititions of around 4% have been obtained with V oc ranging from 0.6 to 2.4 V by applying a simple optimum design rule to the cell-construction parameters.
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