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Abstract
AbstractThe model adopted for the simulation of a new industrial size type of horizontal cold wall reactor for epitaxial silicon carbide deposition is reviewed. The attention is focalized on the chemical mechanism adopted and on the comparison with some growth rate data and temperature profiles for the system ethylene, silane, hydrogen and the deposition of undoped silicon carbide. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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