Abstract
We report an efficient method to obtain CeRh2As2 single crystals with the use of a bismuth flux growth method in a horizontal configuration. Based on our numerous attempts, we found this technique to be scalable and repeatable. The crystals thus obtained are characterized by much sharper phase transitions and distinctly higher characteristic temperatures Tc and T0, compared to previous reports. Moreover, based on our specific heat studies of the obtained single crystals, we also indicate a clear connection between both transition temperatures.
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