Abstract
The hopping rate of localized defects interacting with a two-dimensional electron system is studied. It is shown that, at low temperatures, the hopping rate is an oscillatory function of the inverse ofthe magnetic field. The period and the amplification of the oscillations are independent of the electron-defect interaction and the detailed structure of the sample. It is predicted that the temperature dependence of the hopping rate differs significantly between the cases of filled and half-filled Landau levels.
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