Abstract
Electrical transport properties of undoped and In-doped CuO thin films (1, 5 and 10at. %) are investigated by mean of resistivity in the temperature range of 115–300K. Electrical transport mechanism of films is explained on the basis of the variable-range hopping (VRH) conduction. Upon doping, appreciable changes are found in resistivity. Temperature dependent resistivity shows a complex correlation with increasing In concentration. This situation is well explained by fluctuations in the hopping distance and the density of states at the Fermi level.
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