Abstract
Abstract It is shown that Auger processes at negative U centres may be one of the efficient possible channels for recombination in chalcogenide amorphous semiconductors (CASs). Estimations of the hopping Auger recombination (AR) probability of the ex- charge carriers at the negative U centres are performed. At moderately low temperatures, hopping AR is probably the cause of the photoconductivity observed in CASs.
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