Abstract
AbstractAdsorption of Al atoms on the Si(111) 7 × 7 surface was investigated by STM at room temperature. The adsorbed Al atom displaced a Si center adatom on the surface, and the expelled Si atom diffused inside a half unit cell. The adsorbed Al atom hopped among center adatom sites with a frequency of about 0.01s−1. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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