Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

Abstract

The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors (MOSFETs) on sapphire substrates. Owing to the high quality of the deposited, various ZnO films and interfaces, the resulting MOSFETs manifested attractive characteristics, such as the low gate leakage current of 24nA, the low average interface state density of 2.92×1011cm−2eV−1, and the complete pinch-off performance. The saturation drain–source current, the maximum transconductance, and the gate voltage swing of the resulting homostructured ZnO-based MOSFETs were 5.64mA/mm, 1.31mS/mm, and 3.2V, respectively.