Abstract
This paper describes the photovoltaic properties of homojunction Cu2O solar cells fabricated with various impurity-doped epitaxially grown n-type or i-type Cu2O thin films by an electrochemical deposition (ECD) method. Significantly enhanced open circuit voltage (VOC) and conversion efficiency (η) were achieved in AZO/Cu2O:Cl/p-Cu2O:Na and/or AZO/Cu2O:Mn/p-Cu2O:Na homojunction solar cells fabricated by Cu2O:Cl and/or Cu2O:Mn thin films as the n- or i-type layer using ECD; these values were higher than those obtained in AZO/n-ZnO/p-Cu2O heterojunction solar cells. The obtained enhanced Voc and η suggest that the Cu2O:Cl and/or the Cu2O:Mn thin film layers act as an n- or i-type appropriate active layer. The highest Voc, short-circuit current density (JSC), and the conversion efficiencies for AZO/n-type Zn-Ge-O thin film/Cu2O:Mn/Cu2O:Na homojunction solar cells were 0.84 V, 10.1 mA/cm2, and 4.74%, respectively.
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