Homogeneous nucleation of dislocation loops under stress in perfect crystals

Abstract

We present an analysis and results on the homogeneous nucleation of a dislocation loop under stress in a perfect crystal. By using a variational boundary integral method in the Peierls-Nabarro framework, we have determined the saddle-point configurations of embryonic dislocation loops and their associated activation energies under stress levels up to the ideal shear strength. The high-energy barriers under the usual levels of applied shear stresses, differing markedly from the ideal shear strength, confirm the widely held view that thermal motion should play no role in such nucleation. The result provides means for more definitive solutions of fundamental problems involving homogeneous nucleation of dislocation loops and has significant implications for models based on the mechanism of nucleation of dislocations from a perfect crystal.