Abstract
Amorphous Si layers prepared by MeV Si implantation of (100) wafers have been studied by scanning and isothermal calorimetry. A homogeneous heat release of 5.1±1.2 kJ/mole and an interfacial heat release, due to crystallization, of 13.4±0.7 kJ/mole have been measured. Isothermal measurements unambiguously demonstrate the occurrence of the homogeneous release. The heat released isothermally at each temperature is between 6% and 8.5% of the total homogeneous release, and the time constants are only very weakly temperature dependent.
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