Abstract

Using mathematical modeling of crystal growth processes, we have analyzed the chemical homogeneity of single crystals grown from solution by conventional techniques. The results indicate that all of these techniques are, in principle, unsuitable for the growth of homogeneous single crystals. A mathematical model has been developed for a continuous isothermal growth process which insures constant solution growth conditions and chemical homogeneity of the growing crystal. The key conditions of a continuous isothermal growth process have been formulated which insure an intended uniform distribution of intentional and unintentional impurities in the bulk of the growing single crystal.

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