Abstract
Metal plasma immersion ion implantation and deposition (MePIIID) is a method, where metallic ions emanating from a cathodic arc are deposited onto a sample, intermittently pulsed to negative high voltage pulses. Thus, a fast coating of three-dimensional samples with excellent adhesion properties is possible at low temperatures. Albeit, the homogeneity and the ion incident angle are strongly dependent on the process conditions, i.e. cathode material, gas backfill, sample size and pulse voltage. Corresponding experiments for AlN, TiN, Ti and Al using pulse voltages of up to 10 kV and different flat sample holders are presented. In the discussion, an attempt to assess the relative importance of the process parameters is made.
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